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InMRAM 2017 - 3-7 July 2017Basics of magnetism, spintronics and MRAM technology for students, researchers and engineers in microelectronics.No background in magnetism required.
http://www.inmram.com/
Basics of magnetism, spintronics and MRAM technology for students, researchers and engineers in microelectronics.No background in magnetism required.
http://www.inmram.com/
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17 rue●●●●●●artyrs
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FR
View this contact
SPINTEC SPINTEC
17 rue●●●●●●artyrs
GRE●●●BLE , 38054
FR
View this contact
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InMRAM 2017 - 3-7 July 2017 | inmram.com Reviews
https://inmram.com
Basics of magnetism, spintronics and MRAM technology for students, researchers and engineers in microelectronics.No background in magnetism required.
inmram.com
InMRAM 2017 - 3-7 July 2017
http://www.inmram.com/index.html
Basics of magnetism, spintronics and MRAM technology for students, researchers and engineers in microelectronics. No background in magnetism required. Magnetic Random Access Memory.
Program InMRAM 2017
http://www.inmram.com/program.html
Training on design tools. Basics of magnetism or Basics of microelectronics / Spintronics phenomena. Each attendee can choose to attend one or the other tutorial). 2- Terminals MRAM technologies. Toggle, STT, TAS). 3- Terminals MRAM technologies. Comparison of emerging non-volatile memory technologies. STT-MRAM, PCRAM, ReRAM). Magnetic Random Access Memory.
InMRAM Session
http://www.inmram.com/lastsessions.html
Following the first InMRAM edition, many thanks to the organizing committee, to the speakers and to the participants, who have all contributed to the success of this event. There were 112 attendees for this first InMRAM edition, coming from 20 different countries, most of them (70%) having no background in magnetism. Students, engineers, researchers and industrials were present to follow more than 24 hours of tutorials on various topics related to MRAM. Magnetic Random Access Memory.
Accomodation InMRAM 2017
http://www.inmram.com/accomodation.html
If you are arriving from Chambéry or Geneva via highway A41, take the Rocade Sud (ring road) and follow signs for Lyon par l’autoroute (Lyon by highway). Take exit 2 (Europole) and follow the signs for the Polygone scientifique. From Lyon, Valence, and Marseille via highway A48, take exit 16 and follow signs for the Polygone scientifique. Maison MINATEC and PHELMA - MINATEC Campus. 3 Parvis Louis Néel. 38054 Grenoble Cedex 9 – France. PHELMA & MINATEC is well served by public transportation. The ...
Objectifs InMRAM 2017
http://www.inmram.com/objectifs.html
Magnetic Random Access Memory.
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Cursos
http://www.cemag.es/cursos.html
CURSOS Y ESCUELAS 2016. Second Marie Curie School on Domain Walls and Spintronics. 12-16 Septiembre 2016, Spetses (Grecia). International Summer School on Nanofabrication and Transmission Electron Microscopy Characterization. 18-22 Julio 2016, Zaragoza. IEEE Magnetics Society Summer School. 10-16 Julio 2016, Sendai (Japón). Italian School on Magnetism. 18-22 Abril 2016, Milán (Italia). 29 Marzo-29 Abril 2016, Grenoble (Francia). 22 Febrero-4 Marzo 2016, Jülich (Alemania). CURSOS Y ESCUELAS 2015. Introduc...
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InMRAM 2017 - 3-7 July 2017
Basics of magnetism, spintronics and MRAM technology for students, researchers and engineers in microelectronics. No background in magnetism required. Magnetic Random Access Memory.
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